super fast recovery diode RFN1L6S ? series ? dimensions (unit : mm) ? land size figure (unit : mm) standard fast recovery ? applications general rectification ? features 1)small power mold type. pmds ? structure 2)low switching loss 3)low forward voltage ? construction silicon epitaxial planer ? absolute maximum ratings (ti=25 ?c) symbol limits unit v rm 600 v v r 600 v tj 150 ?c tstg ? 55 to ? 150 ?c ? electrical characteristics (tj=25 ?c) symbol min. typ. max. unit v f 1.15 1.45 v i r 0.01 1 a trr 25 35 ns thermal resistance rth(j-l) 23 c/w ? taping dimensions (unit : mm) parameter conditions average rectified forward current io reverse voltage repetitive peak reverse voltage junction temperature forward current surge peak i fsm 60hz half sin wave, non-repetitive conditions parameter storage temperature junction to lead reverse recovery time reverse current i f =0.8a v r =600v i f =0.5a,i r =1a,irr=0.25i r forward voltage d 0.5 direct voltage glass epoxy substrate mounted r-road, 60hz half sin wave tl=115c one cycle peak value, tj=25c 0.8 a 15 a pmds 2.0 4.2 2.0 rohm : pmds jedec : sod-106 6 6 0.10.02 0.1 2.60.2 2.00.2 5.00.3 1.20.3 4.50.2 1.50.2 8 4 manufacture date 4.00.1 2.90.1 4.00.1 2.00.05 1.550.05 5.50.05 1.750.1 120.2 1.55 9.50.1 0.3 5.30.1 0.05 2.8max 1/4 2011.10 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
RFN1L6S 0.01 0.1 1 10 0 500 1000 1500 2000 2500 forward voltage v f (mv) v f - i f characteristics forward current:i f (a) tj=125 c tj=25 c tj=150 c tj=75 c 1 10 100 1000 10000 0 200 400 600 tj=150 c tj=25 c tj=75 c tj=125 c reverse current:i r (na) reverse voltage v r (v) v r - i r characteristics 1 10 100 0 5 10 15 20 25 30 f=1mhz capacitance between terminals:ct(pf) reverse voltage:v r (v) v r - ct characteristics 900 950 1000 1050 1100 1150 1200 1250 1300 v f dispersion map forward voltage:v f (mv) ave:1110mv tj=25 c i f =0.8a n=20pcs 1 10 100 1000 reverse current:i r (na) ir dispersion map tj=25 c v r =600v n=20pcs ave:14.8na 10 15 20 25 30 35 40 ave:28.5pf tj=25 c f=1mhz v r =0v n=10pcs capacitance between terminals:ct(pf) ct dispersion map 2/4 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RFN1L6S 0.1 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 rth(j - l) 0 10 20 30 40 50 60 ave:21.4a 8.3ms i fsm 1cyc i fsm dispersion map its ability of peak surge forward current:i fsm (a) 0 10 20 30 40 ave:23.9ns tj=25 c i f =0.5a i r =1a irr=0.25*i r n=10pcs trr dispersion map reverse recovery time:trr(ns) 1 10 100 1 10 100 8.3ms i fsm 1cyc 8.3ms peak surge forward current:i fsm (a) number of cycles i fsm - cycle characteristics 1 10 100 1 10 100 t i fsm peak surge forward current:i fsm (a) time:t(ms) i fsm - t characteristics 0 5 10 15 20 25 30 c=100pf r=1.5k c=200pf r=0 ave:1.55kv ave:10.2kv electrostatic discharge test esd(kv) esd dispersion map time:t(s) rth - t characteristics transient thermal impedance:rth ( c /w) rth(j - a) on glass - epoxy substrate soldering land 2mm rth(j - a) on glass - epoxy substrate soldering land 10mm 3/4 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RFN1L6S 0 0.5 1 1.5 2 2.5 0 0.5 1 1.5 d.c. d=0.5 d=0.2 d=0.1 d=0.05 half sin wave d=0.8 forward power dissipation:pf(w) average rectified forward current io(a) io - pf characteristics 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 30 60 90 120 150 d.c. d=0.5 d=0.2 d=0.1 d=0.05 half sin wave d=0.8 ambient temperature:ta( c ) derating curve (io - ta) average rectified forward current:io(a) t tj=150 c d=t/t t v r io v r =480v 0a 0 v on glass - epoxy substrate soldering land 2mm 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 30 60 90 120 150 d.c. d=0.5 d=0.2 d=0.1 d=0.05 half sin wave d=0.8 average rectified forward current:io(a) case temperature:tl( c ) derating curve (io - tl) t tj=150 c d=t/t t v r io v r =480v 0a 0v 4/4 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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